Method for inspecting photomask and device

• Main Authors: CHEN JIANLIN, WEN ZHIWEI, ZENG XINFU
• Format: Patent
• Language: Chinese; English
• Published: 21.01.2022
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

The embodiment of the invention relates to a method for inspecting a photomask and a device thereof. The method includes: receiving a photomask; patterning the wafer via directing a first radiation beam through the photomask at a first tilt angle to the wafer; and inspecting the photomask. The inspecting includes: directing a second radiation beam to the photomask at a second tilt angle greater than the first tilt angle; receiving a third radiation beam reflected from the photomask; and generating an image of the photomask according to the third radiation beam. 本发明实施例涉及检查光掩模的方法及其装置。一种方法包括：接收光掩模；经由以第一倾斜角穿过所述光掩模将第一辐射束引导到晶片而图案化所述晶片；及检查所述光掩模。所述检查包括：以大于所述第一倾斜角的第二倾斜角将第二辐射束引导到所述光掩模；接收从所述光掩模反射的第三辐射束；根据所述第三辐射束产生所述光掩模的图像。