Interdigitated back contact (IBC) structure gallium antimonide thermophotovoltaic cell and preparation method thereof

• Main Authors: YUAN CHENGYANG, LIU YONGHUI, TANG LIANGLIANG, XU WEIHUI, SHAO JIANXIONG
• Format: Patent
• Language: Chinese; English
• Published: 18.01.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-REDRADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, E.G. USINGPHOTOVOLTAIC [PV] MODULES; SEMICONDUCTOR DEVICES

The invention relates to a preparation method of a gallium antimonide thermophotovoltaic cell with an IBC structure, and belongs to the technical field of thermophotovoltaic cells. The preparation method comprises the following steps: S1, cleaning and drying a P-type GaSb wafer; S2, performing texture etching on the front surface of the P-type GaSb wafer, and preparing a Si3N4 or Ta2O5 anti-reflection film; S3, preparing a SiO2 or TiO2 passivation layer after polishing the back surface of the P-type GaSb wafer, then defining an N + type region, removing the passivation layer, and forming an N + type diffusion layer through thermal diffusion of selenium; S4, supplementing and depositing a passivation layer on the back surface of the P-type GaSb wafer, then defining a P+ type region, removing the passivation layer, and forming a P+ type diffusion layer through thermal diffusion zinc; S5, supplementing and depositing a passivation layer on the back of the P-type GaSb wafer again, then defining a negative electro