5 GROUP 5 METAL COMPOUND FOR THIN FILM DEPOSITION AND METHOD OF FORMING GROUP 5 METAL CONTAINING THIN FILM USING THE SAME

• Main Authors: JI SUNG-JUN, BAIK SUN-YOUNG, LEE TAE-YOUNG
• Format: Patent
• Language: Chinese; English
• Published: 18.01.2022
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A group 5 metal compound according to an embodiment of the present disclosure is represented by any one of the following and : in a formula 1 and a formula 2, M is any one selected from group 5 metal elements, n is any one selected from an integer of 1 to 5,R1 is any one selected from a linear alkyl group having 3 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, and R2 and R3 are each independently any one selected from hydrogen, a linear alkyl group having 1 to 4 carbon atoms, and a branched alkyl group having 1 to 4 carbon atoms. 根据本公开的实施方案的第5族金属化合物由以下<化学式1>和<化学式2>中的任一个表示：在<化学式1>和<化学式2>中，M是选自第5族金属元素中的任意一种，n是选自1至5的整数中的任意一个，R1是选自具有3至6个碳原子的直链烷基基团和具有3至6个碳原子的支链烷基基团中的任意一种，并且R2和R3各自独立地为选自氢、具有1至4个碳原子的直链烷基基团和具有1至4个碳原子的支链烷基基团中的任意一种。