Terahertz broadband zero-bias detection chip adopting Schottky barrier diode

• Main Authors: YU XUMING, NIU BIN, JI DONGFENG, WANG WEIBO, TAO HONGQI
• Format: Patent
• Language: Chinese; English
• Published: 14.01.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a terahertz broadband zero-bias detection chip adopting a Schottky barrier diode, and belongs to the technical field of millimeter wave and terahertz detection. The chip comprises a dielectric substrate and a grounding metal plate below the dielectric substrate, wherein and metal grounding on the dielectric substrate is realized by connecting a metal through hole penetrating through the dielectric substrate and the grounding metal plate, and an input GSG structure, a series MIM capacitor, a parallel open-circuit micro-strip branch, a low-impedance micro-strip transmission line, a first parallel short-circuit micro-strip branch, a second parallel short-circuit micro-strip branch, a first high-impedance connection micro-strip line, a Schottky barrier diode, a second high-impedance connection micro-strip line, a parallel grounding MIM capacitor and an output GSG structure are sequentially arranged on the dielectric substrate from left to right. According to the terahertz broadband zero-b