Bipolar SCR

The embodiment of the application relates to a bipolar SCR. In described examples, a high-voltage bipolar semiconductor controlled rectifier SCR (100) includes: an emitter region (102) having a first polarity and overlying a base region (104) having a second polarity different from the first polarit...

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Bibliographic Details
Main Authors APPASWAMY ARAVIND C, PHILLIPS SEAN
Format Patent
LanguageChinese
English
Published 11.01.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The embodiment of the application relates to a bipolar SCR. In described examples, a high-voltage bipolar semiconductor controlled rectifier SCR (100) includes: an emitter region (102) having a first polarity and overlying a base region (104) having a second polarity different from the first polarity; a collector region (106, 108) having the first polarity and lying under the base region (104); an anode region (114, 116, 120) having the second polarity; a first sinker region (118) having the first polarity and contacting the collector region (106, 108), wherein the anode region (114, 116, 120) is between the first sinker region (118) and the base region (104); and a second sinker region (112) having the first polarity and contacting the collector region (106, 108, 110), the second sinker region (112) lying between the anode region (114, 116, 120) and the base region (104), wherein an extension (120) of the anode region (114, 116, 120) extends under a portion of the second sinker region (112). 本申请实施例涉及双极半导体可控整
Bibliography:Application Number: CN202111174766