VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH MONOLITHICALLY INTEGRATED PHOTODIODE

The present invention relates to Vertical Cavity Surface Emitting Laser (VCSEL) device (10). The VCSEL device (10) comprises an optical resona- tor (18), a photodiode (34), and an electrical contact arrangement (36, 38, 40). The optical resonator (18) comprises a first distributed Bragg reflector (1...

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Main Authors WEICHMANN ULRICH, WEIDENFELD SUSANNE, MOENCH HOLGER JOACHIM, GERLACH PHILIPP HENNING
Format Patent
LanguageChinese
English
Published 07.01.2022
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Abstract The present invention relates to Vertical Cavity Surface Emitting Laser (VCSEL) device (10). The VCSEL device (10) comprises an optical resona- tor (18), a photodiode (34), and an electrical contact arrangement (36, 38, 40). The optical resonator (18) comprises a first distributed Bragg reflector (12), a second distributed Bragg reflector (16), and an active region (14) for light emission. The active region (14) is arranged between the first and second distributed Bragg reflectors (12, 16). The photodiode (34) comprises a light absorption region (20). The electrical contact arrangement (36, 38, 40) is arranged to provide an electrical drive current to electrically pump the optical resonator (18), and to electrically contact the photodiode (34). The active region (14) comprises at least one InxGa1-xAs layer, wherein 0 <= x < 1, and the light absorption region (20) comprises at least one InyGa1-yAs layer, wherein 0< y < 1, and wherein y is greater than x. 本发明涉及垂直腔面发射激光器(VCSEL)装置(10)。该VCSEL装置(10)包括光学谐振器(18)、光电二极
AbstractList The present invention relates to Vertical Cavity Surface Emitting Laser (VCSEL) device (10). The VCSEL device (10) comprises an optical resona- tor (18), a photodiode (34), and an electrical contact arrangement (36, 38, 40). The optical resonator (18) comprises a first distributed Bragg reflector (12), a second distributed Bragg reflector (16), and an active region (14) for light emission. The active region (14) is arranged between the first and second distributed Bragg reflectors (12, 16). The photodiode (34) comprises a light absorption region (20). The electrical contact arrangement (36, 38, 40) is arranged to provide an electrical drive current to electrically pump the optical resonator (18), and to electrically contact the photodiode (34). The active region (14) comprises at least one InxGa1-xAs layer, wherein 0 <= x < 1, and the light absorption region (20) comprises at least one InyGa1-yAs layer, wherein 0< y < 1, and wherein y is greater than x. 本发明涉及垂直腔面发射激光器(VCSEL)装置(10)。该VCSEL装置(10)包括光学谐振器(18)、光电二极
Author WEIDENFELD SUSANNE
MOENCH HOLGER JOACHIM
GERLACH PHILIPP HENNING
WEICHMANN ULRICH
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DocumentTitleAlternate 具有单片集成的光电二极管的垂直腔面发射激光器装置
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Snippet The present invention relates to Vertical Cavity Surface Emitting Laser (VCSEL) device (10). The VCSEL device (10) comprises an optical resona- tor (18), a...
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SourceType Open Access Repository
SubjectTerms ANALOGOUS ARRANGEMENTS USING OTHER WAVES
BASIC ELECTRIC ELEMENTS
DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES
DEVICES USING STIMULATED EMISSION
ELECTRICITY
LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES
MEASURING
PHYSICS
RADIO DIRECTION-FINDING
RADIO NAVIGATION
TESTING
Title VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH MONOLITHICALLY INTEGRATED PHOTODIODE
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