VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH MONOLITHICALLY INTEGRATED PHOTODIODE
The present invention relates to Vertical Cavity Surface Emitting Laser (VCSEL) device (10). The VCSEL device (10) comprises an optical resona- tor (18), a photodiode (34), and an electrical contact arrangement (36, 38, 40). The optical resonator (18) comprises a first distributed Bragg reflector (1...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
07.01.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to Vertical Cavity Surface Emitting Laser (VCSEL) device (10). The VCSEL device (10) comprises an optical resona- tor (18), a photodiode (34), and an electrical contact arrangement (36, 38, 40). The optical resonator (18) comprises a first distributed Bragg reflector (12), a second distributed Bragg reflector (16), and an active region (14) for light emission. The active region (14) is arranged between the first and second distributed Bragg reflectors (12, 16). The photodiode (34) comprises a light absorption region (20). The electrical contact arrangement (36, 38, 40) is arranged to provide an electrical drive current to electrically pump the optical resonator (18), and to electrically contact the photodiode (34). The active region (14) comprises at least one InxGa1-xAs layer, wherein 0 <= x < 1, and the light absorption region (20) comprises at least one InyGa1-yAs layer, wherein 0< y < 1, and wherein y is greater than x.
本发明涉及垂直腔面发射激光器(VCSEL)装置(10)。该VCSEL装置(10)包括光学谐振器(18)、光电二极 |
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Bibliography: | Application Number: CN202080041220 |