METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND OPTOELECTRONIC DEVICE

• Main Authors: KLEMP CHRISTOPH, SUNDGREN PETRUS, BIEBERSDORF ANDREAS, EBBECKE JENS, KREUTER PHILIPP, PIETZONKA INES
• Format: Patent
• Language: Chinese; English
• Published: 04.01.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for manufacturing a semiconductor device, particularly an optoelectronic device, proposes to provide a growth substrate (10); to deposit an n-doped first layer (20) and an active region (30) on the n-doped first layer (20); then a second layer (50) is deposited onto the active region (30); the second layer is doped with Mg in the second layer (50); Subsequently to depositing Mg, Zn is deposited in the second layer (50) such that a concentration of Zn in the second layer is decreasing from a first value to a second value in a first area of the second layer adjacent to the active region, said first area in the range of 5 nm to 200 nm, in particularly less than 50nm. 一种用于制造半导体装置特别是光电装置的方法，该方法包括：设置生长衬底(10)；沉积n型掺杂的第一层(20)以及将有源区(30)沉积在n型掺杂的第一层(20)上；然后，将第二层(50)沉积到有源区(30)上；第二层在第二层(50)中掺杂有Mg；在沉积Mg之后，将Zn沉积在第二层(50)中，使得第二层中Zn的浓度在第二层的与有源区相邻的第一区域中从第一值减小到第二值，所述第一区域在5nm至200nm的范围内，特别地小于50nm。