Method of forming material layer, semiconductor device, and method of manufacturing semiconductor device

• Main Authors: KIM YUN-SOO, LEE JIN-HO, KIM JAE-WOON, KIM HAE-RYONG, SHIRATORI TSUBASA
• Format: Patent
• Language: Chinese; English
• Published: 31.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method of forming a material layer according to some embodiments of the inventive concepts may include a deposition cycle comprising providing an adsorption inhibitor on a substrate; purging the excessive adsorption inhibitor; providing a metal precursor on the substrate; purging the excess metal precursor; and supplying a reactant to form a material layer on the substrate. The adsorption inhibitor may include a Group 15 element or a Group 16 element. 根据本发明构思的一些实施例的形成材料层的方法可以包括沉积循环，沉积循环包括：在衬底上提供吸附抑制剂；吹扫过量的吸附抑制剂；在衬底上提供金属前体；吹扫过量的金属前体；以及供应反应剂以在衬底上形成材料层。吸附抑制剂可以包括15族元素或16族元素。