METHOD FOR ULTRA-FAST GROWTH OF GRAPHENE

• Main Authors: ZHAO YULIANG, LIANG JIANBO, YANG YI, GE YIFEI, WANG LUFENG, XU JIANXUN
• Format: Patent
• Language: Chinese; English
• Published: 24.12.2021
• Subjects: CHEMISTRY; COMPOUNDS THEREOF; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT THEREOF; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS; NANOTECHNOLOGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

Provided by the present invention is a class of methods for ultra-fast growth of graphene in large areas on the surface of metal and non-metal planes as well as pinpoint substrates, the metal substrates preferably being Fe, Ni, W, or the like, and non-metal substrates preferably being glass, silicon, silicon nitride, polymer materials, or the like. The present invention uses pulsed current, induction current or converging microwave energy, or the like to act on a carbonized substrate material according to different material properties, and generates a large amount of heat in situ by means of the current on the substrate surface to achieve instantaneous quenching of the material and then generate a large range of continuous single or multi-layer graphene on the material surface. The method according to the present invention allows the growth of graphene, having good interfacial contact, on the surface of materials that do not tolerate high temperature for long a period of time. The method provided by the prese