Polyhedral CsPbBr3@CsPbX3 core-shell perovskite heterojunction and preparation method thereof

• Main Authors: HE JIAZHEN, LIU YONG, DONG SHUNHONG
• Format: Patent
• Language: Chinese; English
• Published: 24.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a polyhedral CsPbBr3@CsPbX3 core-shell heterojunction and a preparation method thereof. In the core-shell perovskite heterojunction, a polyhedral CsPbBr3 is used as a core, CsPbX3 is used as a shell layer, and X is Cl or I. The preparation method comprises the following steps of sleeving a quartz tube 2 in a quartz tube 1 of a double-temperature-zone tubular furnace, respectively placing cesium halide and lead halide mixed powder and a polyhedron CsPbBr3 deposited on a substrate at two ends in the quartz tube 2 and respectively positioned in an upstream zone and a downstream zone of the double-temperature-zone tubular furnace, setting the temperature of the upstream zone to be 540-700 DEG C, setting the temperature of the downstream zone to be 270-330 DEG C, and preparing the polyhedral CsPbBr3@CsPbX3 core-shell heterojunction in an inert gas atmosphere, wherein X is Cl or I. The preparation method is simple, the surface of the obtained CsPbBr3@CsPbX3 core-shell structure is smooth, th