METHOD AND OPTICAL SYSTEM FOR PROCESSING A SEMICONDUCTOR MATERIAL
The invention relates to a method and an optical system for processing a semiconductor material layer, in particular for creating a crystalline semiconductor layer. The method comprises the following steps: - providing a first laser beam (74) having a first laser pulse (76) and a second laser beam (...
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Format | Patent |
Language | Chinese English |
Published |
17.12.2021
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Abstract | The invention relates to a method and an optical system for processing a semiconductor material layer, in particular for creating a crystalline semiconductor layer. The method comprises the following steps: - providing a first laser beam (74) having a first laser pulse (76) and a second laser beam (84) having a second laser pulse (86), - transforming the first laser pulse (76) and the second laser pulse (86), by means of a beam forming device, into a laser pulse in line form having a short axis and a long axis, - imaging the laser pulse that is thus formed in line form, by means of an imaging device, as an illumination line having a short axis and a long axis on the semiconductor material layer, wherein the method furthermore comprises the following steps: - adjusting a polarization direction of the first laser pulse (76) in the direction of the short axis of the illumination line (36), - adjusting a polarization direction of the second laser pulse (86) in the direction of the long axis of the illumination li |
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AbstractList | The invention relates to a method and an optical system for processing a semiconductor material layer, in particular for creating a crystalline semiconductor layer. The method comprises the following steps: - providing a first laser beam (74) having a first laser pulse (76) and a second laser beam (84) having a second laser pulse (86), - transforming the first laser pulse (76) and the second laser pulse (86), by means of a beam forming device, into a laser pulse in line form having a short axis and a long axis, - imaging the laser pulse that is thus formed in line form, by means of an imaging device, as an illumination line having a short axis and a long axis on the semiconductor material layer, wherein the method furthermore comprises the following steps: - adjusting a polarization direction of the first laser pulse (76) in the direction of the short axis of the illumination line (36), - adjusting a polarization direction of the second laser pulse (86) in the direction of the long axis of the illumination li |
Author | GEBURT SEBASTIAN KAHLERT HANS-JUERGEN |
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DocumentTitleAlternate | 用于加工半导体材料的方法和光学系统 |
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Snippet | The invention relates to a method and an optical system for processing a semiconductor material layer, in particular for creating a crystalline semiconductor... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | METHOD AND OPTICAL SYSTEM FOR PROCESSING A SEMICONDUCTOR MATERIAL |
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