METHOD AND OPTICAL SYSTEM FOR PROCESSING A SEMICONDUCTOR MATERIAL

The invention relates to a method and an optical system for processing a semiconductor material layer, in particular for creating a crystalline semiconductor layer. The method comprises the following steps: - providing a first laser beam (74) having a first laser pulse (76) and a second laser beam (...

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Bibliographic Details
Main Authors GEBURT SEBASTIAN, KAHLERT HANS-JUERGEN
Format Patent
LanguageChinese
English
Published 17.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a method and an optical system for processing a semiconductor material layer, in particular for creating a crystalline semiconductor layer. The method comprises the following steps: - providing a first laser beam (74) having a first laser pulse (76) and a second laser beam (84) having a second laser pulse (86), - transforming the first laser pulse (76) and the second laser pulse (86), by means of a beam forming device, into a laser pulse in line form having a short axis and a long axis, - imaging the laser pulse that is thus formed in line form, by means of an imaging device, as an illumination line having a short axis and a long axis on the semiconductor material layer, wherein the method furthermore comprises the following steps: - adjusting a polarization direction of the first laser pulse (76) in the direction of the short axis of the illumination line (36), - adjusting a polarization direction of the second laser pulse (86) in the direction of the long axis of the illumination li
Bibliography:Application Number: CN202080034669