Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal

• Main Authors: IMANISHI MASAYUKI, KITAMOTO AKIRA, TAKINO JUNICHI, SUMI TOMOAKI, YOSHIMURA MASASHI, MORI YUSUKE, OKAYAMA YOSHIO
• Format: Patent
• Language: Chinese; English
• Published: 17.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a group III nitride crystal, a group III nitride substrate, and a method of manufacturing the group III nitride crystal. A group III nitride crystal having both high conductivity and a low absorption coefficient is provided, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, the concentration of the N-type dopant is 1*1020 cm-3 or more, and the concentration of the hydrogen element is 1*1019 cm-3 or more. 本发明提供III族氮化物晶体、III族氮化物基板及III族氮化物晶体的制造方法。提供具有优异的导电性和低吸光系数的III族氮化物晶体。III族氮化物晶体掺杂有N型掺杂剂和氢元素，N型掺杂剂的浓度为1×1020cm-3以上，氢元素的浓度为1×1019cm-3以上。