METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCESS MEMORY DEVICES

• Main Authors: CONSIGLIO STEVEN, WAJDA CORY, TAPILY KANDABARA, ANDO TAKASHI, NARAYANAN VIJAY, CARTIER EDUARD ALBERT, TSUNOMURA TAKAAKI, HOPSTAKEN MARINUS J, JAMISON PAUL
• Format: Patent
• Language: Chinese; English
• Published: 14.12.2021
• Subjects: ELECTRICITY

A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source. 一种用于控制阻变随机存取存储器(ReRAM)器件中的介电薄膜的形成电压的方法。该方法包括：在基板上沉积含有本征缺陷的介电薄膜，形成等离子体激发的含H2气的处理气体，以及将该介电薄膜暴露于该等离子体激发的处理气体中以在该介电薄膜中产生附加缺陷而没有显著改变该介电薄膜的物理厚度，其中该附加缺陷降低了在该介电薄膜上产生导电细丝所需的形成电压。该介电薄膜可以包括金属氧化物薄膜以及可以使用微波等离子体源来形成该等离子体激发的处理气体。