HIGH TEMPERATURE HEATING OF A SUBSTRATE IN A PROCESSING CHAMBER

• Main Authors: CONNER RAND, LEE JAMES, SHAIKH FAYAZ, MUDROW MATTHEW, SLEVIN DAMIEN
• Format: Patent
• Language: Chinese; English
• Published: 14.12.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A processing chamber includes: a lower portion; an upper portion that covers the lower portion; a pedestal that is located within the lower portion, to vertically support a substrate above a top surface of the pedestal to distribute a precursor between the top surface and a first surface of the substrate, the pedestal configured to be electrically connected to one of a ground potential and a radio frequency potential; a grid that is coupled to the upper portion and that is configured to be electrically connected to the other one of the ground potential and the radio frequency potential; a window that covers an opening in the upper portion; and an infrared light source configured to transmit infrared light through the window and the grid to a second surface of the substrate. The second surface of the substrate is opposite the first surface of the substrate. 一种处理室包含：下部；覆盖所述下部的上部；位于所述下部内的基座，所述基座用于：将衬底竖直地支撑于所述顶表面上方，以在所述基座的所述顶表面和所述衬底的第一表面之间分配前体，所述基座被配置成电连接至接地电位和射频电位中的一者；栅格，所述栅格耦合至所述上部并且被电连接至所述接地电位和所述射频电位中的另一者；覆盖所述