Preparation method of semiconductor packaging material or substrate material, semiconductor packaging material or substrate material obtained through preparation method and application of semiconductor packaging material or substrate material

• Main Authors: FANG YUANFENG, SHEN HAIBIN, CHEN SHUZHEN, WANG KE
• Format: Patent
• Language: Chinese; English
• Published: 03.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS

The invention provides a preparation method of a semiconductor packaging material or a substrate material. The preparation method comprises the following steps of: providing spherical or amorphous polysiloxane; in an oxidizing gas atmosphere, before organic components in polysiloxane particles are substantially completely oxidized, raising a temperature to 600-800 DEG C for heat treatment so as to allow a compact silicon oxide layer to be formed on the surface of the powder and the organic components in the heat-treated powder to be thermally decomposed into carbon elements; conducting calcining at a temperature of more than 800 DEG C and less than 1100 DEG C to obtain a black spherical or amorphous silicon oxide filler so as to condense residual silicon hydroxyl groups; and tightly filling resin with the black spherical or amorphous silicon oxide filler in a graded manner to form the semiconductor packaging material or substrate material. The black spherical or amorphous silicon oxide can be directly made in