Flip light-emitting diode and preparation method thereof

• Main Authors: CHEN JIANBIN, ZANG YASHU, LYU QIMENG, CHEN SIHE, LI JUNXIAN, HUANG YUJIE, HAN TAO
• Format: Patent
• Language: Chinese; English
• Published: 26.11.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a flip light-emitting diode. The flip light-emitting diode comprises: a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, wherein the semiconductor stack comprising a first region and a second region which is not overlapped with the first region; a plurality of holes comprising a plurality of first holes and a plurality of second holes, wherein the first holes and the second holes penetrate through the second semiconductor layer, the active layer and part of the first semiconductor layer to expose part of the surface of the first semiconductor layer, the first holes are located in the first region, and the second holes are located in the second region; a first pad electrode formed on the semiconductor stack first region and electrically connected to the first semiconductor layer; and a second pad electrode formed on the second region of the semiconductor stack and electrically connected to the sec