Strong infrared luminous Cu2O/SnO semiconductor composite material

The invention discloses a Cu2O/SnO semiconductor composite material with strong infrared luminescence. The composite material is obtained by fully mixing CuO powder and SnS powder according to a molar ratio of 10:(1-1.2), tabletting the mixture and then annealing the mixture in a nitrogen atmosphere...

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Bibliographic Details
Main Authors GAO FEI, LIU SHENGZHONG, LI JIAHUI, ZHANG CHAOQUN, SHI BONAN, LI YUANRUI
Format Patent
LanguageChinese
English
Published 26.11.2021
Subjects
ADHESIVES
CHEMISTRY
DYES
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
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Summary:The invention discloses a Cu2O/SnO semiconductor composite material with strong infrared luminescence. The composite material is obtained by fully mixing CuO powder and SnS powder according to a molar ratio of 10:(1-1.2), tabletting the mixture and then annealing the mixture in a nitrogen atmosphere at 800-950 DEG C for 5-15 minutes. According to the invention, the SnO is used for conducting doping modification on Cu2O, the photoelectric property of Cu2O can be effectively improved, the photoluminescence intensity of the obtained composite material can reach about 533 times that of Cu2O obtained after pure CuO is annealed, and meanwhile, the composite material has the advantages of being high in light absorption coefficient, stable in chemical property, rich in natural reserves, low in manufacturing cost, not harsh in synthesis condition, wide in temperature window and the like; therefore, the composite material is suitable for large-scale production and is expected to become a novel material in the field of
Bibliography:Application Number: CN202111036634