RERAM PROGRAMMING METHOD INCLUDING LOW-CURRENT PRE-PROGRAMMING FOR PROGRAM TIME REDUCTION

• Main Authors: XUE FENGLIANG, MCCOLLUM JOHN L, DHAOUI FETHI, NGUYEN VICTOR
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2021
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A method for programming a resistive random-access memory (ReRAM) cell includes passing a first current through the ReRAM device for a first period of time, the first current selected to create a leakage path through the ReRAM device, and after passing the first current through the ReRAM device passing a second current through the ReRAM device for a second period of time shorter than the first period of time, the second current selected to create a current path having a desired resistance through the leakage path through the ReRAM device. 一种用于对电阻式随机存取存储器(ReRAM)单元进行编程的方法，包括在第一时间段内使第一电流通过ReRAM器件，第一电流被选择成形成通过ReRAM器件的泄漏路径，以及在使第一电流通过ReRAM器件之后，在短于第一时间段的第二时间段内使第二电流通过ReRAM器件，第二电流被选择成形成通过穿过ReRAM器件的泄漏路径的具有期望电阻的电流路径。