Manufacturing method of inclined field plate, HEMT device and manufacturing method of HEMT device

• Main Authors: NING DIANHUA, LIU YONGSHENG, JIANG SHENG, LIU DONGYAO, CHENG XIN
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a manufacturing method of an inclined field plate, an HEMT device and a manufacturing method of the HEMT device. The manufacturing method comprises the following steps of forming a photoresist mask on a first passivation layer, forming a trapezoidal structure on the photoresist mask through an exposure and development process, filling a second passivation layer in the trapezoidal structure of the photoresist mask, removing the photoresist mask, forming a third passivation layer on the first passivation layer and the second passivation layer, wherein the third passivation layer comprises an inclined surface, and forming a metal field plate on the third passivation layer, wherein the metal field plate is at least formed on all or part of the inclined surface of the third passivation layer. The trapezoidal structure is formed through the photoresist mask, and the inclined surface of the trapezoidal structure is transferred to the passivation layer, so that the inclined field plate is prep