Preparation method of silicon-based size-controllable beta-Ga2O3 nanowire

• Main Authors: SHANG YI, TANG KE, DENG JIE, HUANG JIAN, DING KEKE, ZHANG ZILONG, GU KEYUN, LIU ZUN, WANG LINJUN, ZHANG ZHILUO
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a preparation method of a silicon-based size-controllable beta-Ga2O3 nanowire. The preparation method of the silicon-based size-controllable beta-Ga2O3 nanowire comprises the following steps: firstly, depositing gold (Au) catalyst layers with different thicknesses on a single crystal Si (100) substrate, and carrying out in-situ spheroidizing annealing on the catalyst layers to obtain Au nanoparticles with different sizes; and then carrying out magnetron sputtering to grow beta-Ga2O3 nanowires, and carrying out in-situ annealing to obtain the beta-Ga2O3 nanowires with different sizes. The beta-Ga2O3 nanowire with the advantages of fewer defects, high resistivity, uniformity, compactness and the like can be obtained by regulating and controlling the size of the beta-Ga2O3 nanowire. The beta-Ga2O3 nanowires with different sizes prepared by the method show excellent performance in application to solar-blind ultraviolet detectors, can be applied to missile approaching early warning systems,