SiC wafer high-efficiency chamfering method based on water jet laser

• Main Authors: GUO HUI, LIANG JIABO, HU YANFEI
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2021
• Subjects: CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

The invention provides an SiC wafer high-efficiency chamfering method based on a water jet laser. According to the SiC wafer high-efficiency chamfering method based on the water jet laser, an SiC single crystal is chamfered by controlling the laser energy, the water jet characteristic size, the cutting time and the advancing speed of a water jet nozzle in the water jet laser processing technology; and by means of the processing process, the severe heat effect and stress caused by a traditional chamfering mode can be effectively reduced, and therefore the yield of products is increased. 本发明提供的一种基于水射流激光的SiC晶片高效倒角方法，通过控制水射流激光加工技术中的激光能量、水射流特征尺寸和切割时间、水射流喷头行进速度对SiC单晶进行倒角加工，本发明的加工工艺可有效降低传统倒角方式所带来的剧烈热效应和应力，从而提高产品的成品率。