Co3O4-xTex@C@SnTe composite material and preparation method thereof

The invention relates to the technical field of semiconductor composite materials, in particular to a Co3O4-xTex@C@SnTe composite material and a preparation method thereof. The method comprises the following steps: firstly, adding trisodium citrate, ethylenediaminetetraacetic acid and sodium telluri...

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Bibliographic Details
Main Authors LIN PING, CUI CAN, WU XIAOPING, GAO HAIQI, SONG CHANGSHENG, JIN LI, YANG JIAQUAN
Format Patent
LanguageChinese
English
Published 16.11.2021
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Summary:The invention relates to the technical field of semiconductor composite materials, in particular to a Co3O4-xTex@C@SnTe composite material and a preparation method thereof. The method comprises the following steps: firstly, adding trisodium citrate, ethylenediaminetetraacetic acid and sodium tellurite sequentially into a cobalt nitrate solution, carrying out stirring and mixing, and performing solvothermal reaction to obtain a first product; step 2, carrying out annealing treatment on the first product in an inert atmosphere to obtain Co3O4-xTex@C; and 3, adding the Co3O4-xTex@C into a mixed solution of tin tetrachloride and sodium tellurite, carrying out a hydrothermal reaction, and carrying out post-treatment to obtain the Co3O4-xTex@C@SnTe composite material. The method is simple in preparation process, low in equipment requirement and high in controllable degree, and the obtained product is uniform, porous, novel in morphology and high in adsorption capacity and has wide application in the industries of e
Bibliography:Application Number: CN202110991711