III-nitride enhanced HEMT device and manufacturing method thereof

• Main Authors: NING DIANHUA, LIU YONGSHENG, JIANG SHENG, CHENG XIN
• Format: Patent
• Language: Chinese; English
• Published: 09.11.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses an III-nitride enhanced HEMT device and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate; epitaxially growing a channel layer on the substrate; forming a mask in the gate region on the channel layer; epitaxially growing a barrier layer on the channel layer outside the mask based on a selection region growth process; removing the mask; etching the III-group nitride heterojunction to form a source region and a drain region; forming a source electrode and a drain electrode in the source electrode region and the drain electrode region respectively; epitaxially growing an insulating dielectric layer on the gate region; and forming a grid electrode on the insulating dielectric layer. According to the invention, the barrier layer is preferentially grown outside the gate region based on the selection region growth process, and then the insulating dielectric layer and the gate are formed, so that a disconnected two-dimensional electro