SILICON PRECURSOR AND METHOD OF FABRICATING SILICON-CONTAINING THIN FILM USING THE SAME

• Main Authors: PARK JEONG-WOO, SEOK JANG-HYEON, AN JAE-SEOK, KIM YEONG-EUN
• Format: Patent
• Language: Chinese; English
• Published: 09.11.2021
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present disclosure relates to a vapor deposition compound which may be deposited as a thin film by vapor deposition, and specifically, to a silicon precursor which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and may be deposited at high rate, particularly by high-temperature ALD, and a method for fabricating a silicon-containing thin film using the same. 本公开涉及可通过气相沉积被沉积作为薄膜的气相沉积化合物，并且具体地，涉及适用于原子层沉积(ALD)或化学气相沉积(CVD)且可以以高速沉积，特别地通过高温ALD的硅前体以及使用其制造含硅薄膜的方法。