Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

• Main Authors: OKUBO RYO, NOZAWA OSAMU, SHISHIDO HIROAKI
• Format: Patent
• Language: Chinese; English
• Published: 05.11.2021
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MATERIALS THEREFOR; MEASURING; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; TESTING

The present invention addresses the problem of providing a mask blank that makes it possible to further miniaturize a mask pattern or a hard mask pattern and improving the pattern quality, and to resolve this problem, a mask blank (100) has a structure in which a thin film (3) for pattern formation and a hard mask film (4) are laminated in this order on a transparent substrate (1), wherein the hard mask film (4) is configured so that a narrow spectrum of Si2p obtained by analysis by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of 103 eV or more, a maximum peak of a narrow spectrum of N1s obtained by analysis by X-ray photoelectron spectroscopy is equal to or less than a detection lower limit value, and the content ratio (atomic%) of silicon and oxygen is less than Si:O = 1:2. 本发明的课题在于，提供能够使掩模图案、硬掩模图案进一步微细化、以及能够提高图案品质的掩模坯料，为了解决该课题，本发明的掩模坯料(100)具备在透光性基板(1)上依次层叠有图案形成用薄膜(3)和硬掩模膜(4)的结构，该掩模坯料(100)如下所述地构成：上述硬掩模膜(4)的通过X射线光电子能谱法进行分析而得到的Si2p窄谱在103eV以上的键能具有最大峰，通过X射线光电子能谱法进行分析而得到的N1s窄谱的最大峰为检测下限