Preparation method of semiconductor packaging material and substrate material, semiconductor packaging material and substrate material obtained thereby, and application of semiconductor packaging material and substrate material
The invention provides a preparation method of a semiconductor packaging material and a substrate material. The preparation method comprises the steps: providing spherical or amorphous polysiloxane; performing heat treatment under non-oxidizing gas or vacuum to obtain heat-treated powder, so as to t...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
05.11.2021
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a preparation method of a semiconductor packaging material and a substrate material. The preparation method comprises the steps: providing spherical or amorphous polysiloxane; performing heat treatment under non-oxidizing gas or vacuum to obtain heat-treated powder, so as to thermally decompose organic groups in the heat-treated powder into carbon elements, and condensing silicon hydroxyl on the surface of the heat-treated powder to form a surface compact layer; calcining to obtain a black spherical or amorphous silicon oxide filler; and tightly filling and grading the black spherical or amorphous silicon oxide filler in resin to form the semiconductor packaging material and the substrate material. The invention also provides the semiconductor packaging material and the substrate material obtained by the preparation method and an application of the semiconductor packaging material and the substrate material. The black spherical or amorphous silicon oxide filler obtained by the preparati |
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Bibliography: | Application Number: CN202110931525 |