Semiconductor laser and preparation method thereof
The invention discloses a semiconductor laser and a preparation method thereof. The semiconductor laser comprises an N electrode, an N-type substrate, an N-type lower limiting layer, an N-type lower waveguide layer, an active region, a P-type upper waveguide layer, a P-type upper limiting layer and...
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| Main Authors | , , , |
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| Format | Patent |
| Language | Chinese English |
| Published |
02.11.2021
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The invention discloses a semiconductor laser and a preparation method thereof. The semiconductor laser comprises an N electrode, an N-type substrate, an N-type lower limiting layer, an N-type lower waveguide layer, an active region, a P-type upper waveguide layer, a P-type upper limiting layer and a P electrode which are sequentially grown from bottom to top, wherein the N type substrate comprises a reserved space.
一种半导体激光器及其制备方法，其中，半导体激光器包括自下而上依次生长的N电极、N型衬底、N型下限制层、N型下波导层、有源区、P型上波导层、P型上限制层和P电极；其中，所述N型衬底包括预留空间。 |
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| AbstractList | The invention discloses a semiconductor laser and a preparation method thereof. The semiconductor laser comprises an N electrode, an N-type substrate, an N-type lower limiting layer, an N-type lower waveguide layer, an active region, a P-type upper waveguide layer, a P-type upper limiting layer and a P electrode which are sequentially grown from bottom to top, wherein the N type substrate comprises a reserved space.
一种半导体激光器及其制备方法，其中，半导体激光器包括自下而上依次生长的N电极、N型衬底、N型下限制层、N型下波导层、有源区、P型上波导层、P型上限制层和P电极；其中，所述N型衬底包括预留空间。 |
| Author | MU CHUNYUAN ZHU NINGHUA LI MING ZHAI KUNPENG |
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| Snippet | The invention discloses a semiconductor laser and a preparation method thereof. The semiconductor laser comprises an N electrode, an N-type substrate, an... |
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| Title | Semiconductor laser and preparation method thereof |
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