Semiconductor laser and preparation method thereof

The invention discloses a semiconductor laser and a preparation method thereof. The semiconductor laser comprises an N electrode, an N-type substrate, an N-type lower limiting layer, an N-type lower waveguide layer, an active region, a P-type upper waveguide layer, a P-type upper limiting layer and...

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Bibliographic Details
Main Authors ZHAI KUNPENG, LI MING, ZHU NINGHUA, MU CHUNYUAN
Format Patent
LanguageChinese
English
Published 02.11.2021
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:The invention discloses a semiconductor laser and a preparation method thereof. The semiconductor laser comprises an N electrode, an N-type substrate, an N-type lower limiting layer, an N-type lower waveguide layer, an active region, a P-type upper waveguide layer, a P-type upper limiting layer and a P electrode which are sequentially grown from bottom to top, wherein the N type substrate comprises a reserved space. 一种半导体激光器及其制备方法，其中，半导体激光器包括自下而上依次生长的N电极、N型衬底、N型下限制层、N型下波导层、有源区、P型上波导层、P型上限制层和P电极；其中，所述N型衬底包括预留空间。
Bibliography:Application Number: CN202110855578