INTEGRATED CIRCUIT STRUCTURE AND FORMING METHOD THEREOF

• Main Authors: HUANG TIANJIAN, SHEN RUIBIN, ZHANG ZHIXIAN
• Format: Patent
• Language: Chinese; English
• Published: 29.10.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An IC structure includes a resistor circuit and a transistor. The resistor circuit includes a first metal resistor strip over a semiconductor substrate, and a first metal line and a second metal line extending on a same level height above the first metal resistor strip. The first metal resistor strip is a dummy gate. Both the first metal line and the second metal line overlap and are electrically connected to the first metal resistor strip. The transistor includes a metal gate strip on a same level height as the first metal strip and extends in parallel with the first metal resistor strip. Embodiments of the invention relate to an integrated circuit structure and a forming method thereof. 一种IC结构包括电阻器电路和晶体管。电阻器电路包括：第一金属电阻器带，位于半导体衬底上方；以及第一金属线和第二金属线，在第一金属电阻器带上方的同一层级高度上延伸。第一金属电阻器带是伪栅极。第一金属线和第二金属线两者与第一金属电阻器带重叠并且电连接到第一金属电阻器带。晶体管包括金属栅极带，其与第一金属带处于相同层级高度，并与第一金属电阻器带平行地延伸。本申请的实施例提供了集成电路结构及其形成方法。