EDGE-EMITTING LASER BAR
The invention relates to an edge-emitting laser bar (100) comprising an AlInGaN-based semiconductor layer sequence (1) with a contact side (10) and an active layer (11) for generating laser radiation. Furthermore, the laser bar comprises multiple mutually spaced individual emitters (2) which are adj...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
22.10.2021
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to an edge-emitting laser bar (100) comprising an AlInGaN-based semiconductor layer sequence (1) with a contact side (10) and an active layer (11) for generating laser radiation. Furthermore, the laser bar comprises multiple mutually spaced individual emitters (2) which are adjacent to one another in a lateral transverse direction and which emit a respective laser radiation when operated as intended. Multiple contact elements (20) are arranged on the contact side adjacently to one another and in a mutually spaced manner in the lateral transverse direction. Each contact element is paired with an individual emitter, and each contact element is coupled to the semiconductor layer sequence in an electrically conductive manner via a continuous contact region (12). The laser bar comprises a thermal decoupling structure (3) in the region between two adjacent individual emitters (2). The decoupling structure comprises a cooling element (30) which is applied onto the contact side and which complet |
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Bibliography: | Application Number: CN202110756733 |