Preparation method of light emitting diode epitaxial wafer with AlN

• Main Authors: HONG WEIWEI, DONG BINZHONG, WANG QIAN, MEI JING
• Format: Patent
• Language: Chinese; English
• Published: 08.10.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention provides a preparation method of a light-emitting diode epitaxial wafer with AlN, and belongs to the technical field of light-emitting diodes. According to the method, a first AlN film and a second AlN film And are alternately sputteredon the surface of a substrate to finally form an AlN buffer layer, the target distance when the first AlN film is sputtered is a first target distance, the target distance when the second AlN film is sputtered is a second target distance, the first target distance is larger than the second target distance, the thickness and the uniformity of the first AlN film obtained by sputtering with the larger first target distance are better, the speed of sputtering the second AlN film with the small second target distance is high so as to improve the deposition rate of the second AlN film, the internal stress of the first AlN film and the second AlN film which are alternately obtained is released, the overall quality of the AlN buffer layer is improved, and the growth rate