Nonvolatile resettable bidirectional switching device and manufacturing method thereof

• Main Authors: JIN XIAOSHI, LIU XI, LIAN DANCHUN
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2021
• Subjects: ELECTRICITY

The invention discloses a nonvolatile resettable bidirectional switching device, which comprises a silicon substrate of an SOI wafer, wherein a substrate insulating layer of the SOI wafer is arranged above the silicon substrate of the SOI wafer, a semiconductor film, a partial region of a double-bracket nonvolatile charge storage layer, a semiconductor tunneling layer a, a semiconductor tunneling layer b, an interchangeable electrode embedded region a, an interchangeable electrode embedded region b, a partial region of a gate electrode insulating layer, a gate electrode, an insulating layer for preventing charge loss and a partial region of an insulating dielectric barrier layer are arranged above the substrate insulating layer of the SOI wafer. According to the non-volatile resettable bidirectional switching device and the manufacturing method thereof, the device is of a left-right symmetrical structure, the interchangeable electrode a and the interchangeable electrode b can be interchanged with each other,