method of patterning integrated circuit

• Main Authors: TAN LUNGUANG, QIU YAWEN, HUANG JINGHUI
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An embodiment of the present invention discloses a method of patterning an integrated circuit. The method comprises the steps of forming a resist pattern having a trench oriented lengthwise along a first direction and separated by both the resist wall along a first direction and a second direction perpendicular to the first direction. The method further includes loading the resist pattern into the ion implanter such that the top surface of the resist pattern faces the ion propagation direction; and tilting the resist pattern such that the ion propagation direction forms an inclination angle with respect to an axis perpendicular to the top surface of the resist pattern. The method further includes rotating the resist pattern about an axis to a first position; injecting ions into the resist wall with the resist pattern in a first position; rotating the resist pattern about an axis by 180 degrees to a second position; and injecting ions into the resist wall with the resist pattern in the second position. 本发明的实施例