REFRESH RATE CONTROL FOR A MEMORY DEVICE

• Main Authors: BOEHM AARON P, SCHAEFER SCOTT E
• Format: Patent
• Language: Chinese; English
• Published: 28.09.2021
• Subjects: CALCULATING; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; INFORMATION STORAGE; PHYSICS; STATIC STORES

Methods, systems, and devices for refresh rate control for a memory device are described. For example, a memory array of a memory device may be refreshed according to a first set of refresh parameters, such as a refresh rate. The memory device may detect an event at the memory device associated with a reduction in data integrity. In some cases, the event may be associated with a temperature of the memory device, a voltage level detected at the memory device, an error event at the memory device, or the like. As a result of detecting the event, the memory device may adapt one or more of the set of refresh parameters, such as increasing the refresh rate for the memory array. In some cases, the memory device may adapt the set of refresh parameters by increasing a quantity of rows of the memory array that are refreshed during a refresh operation, decreasing a periodicity between refresh operations, or both. 描述了用于存储器装置的刷新速率控制的方法、系统和装置。举例来说，可根据例如刷新速率的第一组刷新参数刷新存储器装置的存储器阵列。所述存储器装置可检测所述存储器装置处与数据完整性降低相关联的事件。在一些情况下，所述事件可