SEMICONDUCTOR DEVICE

The invention provides a semiconductor device which can improve the breakdown tolerance during recovery operation. The semiconductor device according to the present application includes: a semiconductor substrate including a first main surface and a second main surface; a hole injection region inclu...

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Bibliographic Details
Main Authors HARADA KENJI, IKEDA MUNENORI, SONEDA SHINYA
Format Patent
LanguageChinese
English
Published 28.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a semiconductor device which can improve the breakdown tolerance during recovery operation. The semiconductor device according to the present application includes: a semiconductor substrate including a first main surface and a second main surface; a hole injection region including a hole injection layer of a second conductivity type and a semiconductor layer of a second conductivity type provided on the second main surface side; a diode region including: an anode layer of a second conductivity type provided on the first main surface side and a cathode of a first conductivity type on the second main surface side, the diode region having no semiconductor layer of a first conductivity type between the second main surface side end portion of the anode layer and the first main surface of the anode layer; a boundary region including: a boundary portion semiconductor layer of a second conductivity type provided on the first main surface side, a carrier injection suppression layer of a first co
Bibliography:Application Number: CN202110297220