Ee voltage detection device and method for IGBT

• Main Authors: CHEN ZHENGWEN, LIANG YU, WEI HAISHAN, WANG XIAONIAN, TANG WEI, DOU ZECHUN, OUYANG LIU, MA LONGCHANG, ZHU WU, YANG LELE, SUN KANGKANG, CHEN YANPING
• Format: Patent
• Language: Chinese; English
• Published: 24.09.2021
• Subjects: MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; TESTING

The invention provides an Ee voltage detection device for an IGBT, and the device comprises an Ee voltage detection sampling unit which is used for collecting the emitter voltage VEe of a to-be-detected IGBT, and carrying out the voltage dividing and filtering of the emitter voltage VEe, and obtaining a comparison input signal Vee; a state monitoring threshold setting unit, used for setting a high level threshold Vref1 and a low level threshold Vref2 of the voltage of the emitter Ee of the IGBT to be detected; an Ee voltage state comparison unit, used for obtaining a high level state and a low level state of the Ee voltage of the emitter of the IGBT to be detected; an Ee voltage state conversion unit, used for obtaining a high-level state signal, a middle-level state signal and a low-level state signal; and an Ee voltage state processing unit, used for obtaining a high-level state code, an intermediate-level state code and a low-level state code. According to the invention, the IGBT emitter Ee voltage fault c