Operation method of flash memory and flash memory
The invention provides an operation method of a flash memory and the flash memory; the flash memory comprises a plurality of multi-bit memory cells, each multi-bit memory cell can be programmed to one order of multi-order programming threshold voltage, and the multi-order programming threshold volta...
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| Main Author | |
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| Format | Patent |
| Language | Chinese English |
| Published |
21.09.2021
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| Subjects | |
| Online Access | Get full text |
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| Summary: | The invention provides an operation method of a flash memory and the flash memory; the flash memory comprises a plurality of multi-bit memory cells, each multi-bit memory cell can be programmed to one order of multi-order programming threshold voltage, and the multi-order programming threshold voltage is provided with corresponding voltage value distribution area of each order and preset reading voltage of each order. The operation method comprises the following steps: detecting a target-order actual threshold voltage of a target-order programming threshold voltage in multi-order programming threshold voltages; and setting a compensation reading voltage corresponding to the target order programming threshold voltage according to the target order actual threshold voltage. According to the operation method provided by the invention, the compensation reading voltage corresponding to the target order programming threshold voltage is set according to the detected target order actual threshold voltage of the multi- |
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| Bibliography: | Application Number: CN202110726208 |