Light-emitting diode chip with double-layer Bragg reflector and preparation method of light-emitting diode chip

• Main Authors: SUN BINGWEI, TAO YUYU
• Format: Patent
• Language: Chinese; English
• Published: 17.09.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a light-emitting diode chip with a double-layer Bragg reflector and a preparation method of the light-emitting diode chip, and belongs to the technical field of light-emitting diodes. A first Bragg reflector is arranged between the substrate and the n-AlInP limiting layer, and a second Bragg reflector is arranged between the p-AlInP limiting layer and the p-GaP ohmic contact layer. Most of light rays emitted by the light-emitting layer are subjected to scattering and diffuse reflection between the first Bragg reflector and the second Bragg reflector, are reflected when encountering the first Bragg reflector and the second Bragg reflector, and finally are emitted from the side wall of the epitaxial layer between the first Bragg reflector and the second Bragg reflector; therefore, the light absorbed by the substrate is less, and the light emitting rate of the diode is higher. Therefore, the light emitting efficiency and the light emitting uniformity of the finally obtained light emitting