Method for determining gallium in gallium arsenide wafer production wastewater

• Main Authors: LIU JINGJING, LU JUNBING, DENG YONGHUAI, GAO ZHENGJIAO, QI BAIYU, ZHAO HECUN, YANG ZHUORONG, BIAN ZHENTAO, ZHAO KUN, LU CHANGXIANG, HOU XUE, WANG ZHUO
• Format: Patent
• Language: Chinese; English
• Published: 14.09.2021
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

The invention relates to a method for determining gallium in gallium arsenide wafer production wastewater. The method comprises the following steps of (1) establishing a standard curve, (2) adding 1+1 sulfuric acid into the gallium arsenide wafer production wastewater, slightly heating, then adding concentrated hydrochloric acid, evaporating to 20-30 mL at low temperature, then adding concentrated hydrochloric acid, repeatedly evaporating for 3-4 times until sulfur trioxide dense smoke is generated by evaporation and is nearly dry, then adding diluted hydrochloric acid to dissolve salts, and finally fixing the volume to obtain a test solution, (3) dropwise adding a titanium trichloride solution into the test solution until the test solution is purple, adding 4-6 excessive drops of the titanium trichloride solution after the test solution is stable, uniformly shaking, and standing for 10-15 minutes, (4) adding a rhodamine B solution into the solution obtained in the step (3), and uniformly shaking, adding a be