Semiconductor light-emitting element and light-emitting device
The invention relates to a semiconductor light-emitting element and a light-emitting device. The semiconductor light-emitting element comprises a semiconductor layer and bonding pads; the semiconductor layer includes a first conductive type semiconductor layer, a second conductive type semiconductor...
Saved in:
Main Authors | , , , , , , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
07.09.2021
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The invention relates to a semiconductor light-emitting element and a light-emitting device. The semiconductor light-emitting element comprises a semiconductor layer and bonding pads; the semiconductor layer includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a light emitting layer therebetween; the bonding pads comprise a first bonding pad and a second bonding pad which are located on the semiconductor layer, and the first bonding pad and the second bonding pad are connected with the first conductive type semiconductor layer and the second conductive type semiconductor layer respectively; each bonding pad comprises a tin-containing silver layer, the tin-containing silver layer is provided with a first surface and a second surface which are opposite to each other, the first surface is closer to the semiconductor layer than the second surface, calculation is started from the first surface or the second surface, and the atomic percentage of the number of silve |
---|---|
Bibliography: | Application Number: CN202110643648 |