Semiconductor device and manufacturing method thereof

• Main Authors: TAN LUNGUANG, ZHAN YIZHE, ZHENG YIHUA, QIU YAWEN
• Format: Patent
• Language: Chinese; English
• Published: 07.09.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In a method of manufacturing a semiconductor device, a source/drain structure is formed over a substrate, a first inter-layer dielectric (ILD) layer including one or more dielectric layers is formed over the source/drain structure, a first opening is formed in the first ILD layer to at least partially expose the source/drain structure, a sacrificial layer is formed on an inner wall of the first opening, a first insulating layer is formed on the sacrificial layer, a conductive layer is formed on the first insulating layer to form a source/drain contact in contact with the source/drain structure, the sacrificial layer is removed to form a space between the first insulating layer and the first ILD layer, and a second insulating layer is formed over the source/drain contact and the first ILD layer to cover an upper opening of the space, therefore, an air gap is formed. The embodiment of the invention also relates to a semiconductor device. 在制造半导体器件的方法中，在衬底上方形成源极/漏极结构，在源极/漏极结构上方形成包括一个或多个介电层的第一层间介电(ILD)层，在第一ILD层中形成