Transistor device and method of making the transistor device

• Main Authors: ZHOU JIANZHI, ZHENG ZHICHANG, LIU RUIXING, CHEN YIHUAN, LEI MINGDA, ZHU ZHENLIANG, ZHENG GUANGMING, GONG DAYUAN
• Format: Patent
• Language: Chinese; English
• Published: 27.08.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A transistor device with a recessed gate structure is provided. In some embodiments, the transistor device comprises a semiconductor substrate comprising a device region surrounded by an isolation structure and a pair of source/drain regions disposed in the device region and laterally spaced apart one from another in a first direction. A gate structure overlies the device region and the isolation structure and arranged between the pair of source/drain regions. The gate structure comprises a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A channel region is disposed in the device region underneath the gate structure. The channel region has a channel width extending in the second direction from one of the recess regions to the other one of the recess regions. The embodiment also relates to a method of making the transistor device. 提供具有凹进栅极结构的晶体管器件。在一些实施例中，晶体管器件包括半导体衬底，该半导体衬底包括被隔离结构包围的器件区域和设置在该器件区域中并且在第一方向上彼此横向间隔开的成对的源极/漏极区域。栅极结构