Method for forming semiconductor device and semiconductor device

• Main Authors: YOU GUOFENG, ZHAN YONGXIANG, WANG ZHEFU, LIAO SHANMEI, HUANG WENHONG, CHEN JIANHAO
• Format: Patent
• Language: Chinese; English
• Published: 20.08.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a semiconductor device includes forming a first gate dielectric, a second gate dielectric, and a third gate dielectric over a first semiconductor region, a second semiconductor region, and a third semiconductor region, respectively. The method further includes depositing a first lanthanum-containing layer overlapping the first gate dielectric, and depositing a second lanthanum-containing layer overlapping the second gate dielectric. The second lanthanum-containing layer is thinner than the first lanthanum-containing layer. An anneal process is then performed to drive lanthanum in the first lanthanum-containing layer and the second lanthanum-containing layer into the first gate dielectric and the second gate dielectric, respectively. During the anneal process, the third gate dielectric is free from lanthanum-containing layers thereon. According to other embodiments of the invention, the semiconductor device is also provided. 一种形成半导体器件的方法包括：形成分别位于第一半导体区、第二半导体区、和第三半导体区上方的第一栅极电介质、第二栅极电介质、和第三栅