Novel polycrystalline silicon ingot casting device and method

• Main Authors: XU GAOSHENG, QI FENGMING, SUN ZONGYANG
• Format: Patent
• Language: Chinese; English
• Published: 20.08.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a novel polycrystalline silicon ingot casting device and method. The device comprises an outer furnace, the outer furnace comprises a top cover, a middle furnace body is fixedly installed at the bottom of the top cover, a bottom cover is fixedly installed at the bottom of the middle furnace body, an unloading opening is fixedly formed in the top of the top cover, and connecting columns are fixedly installed on the two sides of the unloading opening correspondingly; and a vacuum device is fixedly installed on one side of the middle furnace body, a nitrogen conveying device is fixedly installed on the other side of the middle furnace body, and a controller is fixedly installed on the side, close to the nitrogen conveying device, of the supporting column. According to the novel polycrystalline silicon ingot casting device and method, the structure is simple and reasonable, the design is novel, the outer furnace is provided with the top cover, the middle furnace body and the bottom cover,