Method for growing chambersite single crystal pyroelectric material by melt method

• Main Authors: GUO JIESEN, ZHAO CHANGCHUN, MENG DEZHONG, HOU DONGXU, ZHANG ZEYU, SUN RUIJIN, MA YUXIN, LIU TIANMING, CHEN FEI, WANG QIANGQIANG, WU YUETONG
• Format: Patent
• Language: Chinese; English
• Published: 17.08.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a method for growing a chambersite single crystal pyroelectric material by a melt method, which comprises the following steps: placing chambersite crystal powder in a quartz tube, heating to 950-1050 DEG C at a heating rate of 5-10 DEG C/min, and keeping the temperature for 2-4 hours; and then cooling to 700-900 DEG C in a first time period, then cooling to 400-500 DEG C in a second time period, and then carrying out furnace cooling to obtain the chambersite single crystal pyroelectric material. The chambersite single crystal pyroelectric material prepared by the method for growing the chambersite single crystal pyroelectric material by the melt method has excellent pyroelectricity, and the method is low in preparation cost. 本发明公开了一种熔体法生长锰方硼石单晶热释电材料的方法，所述方法包括：将锰方硼石晶体粉末置于石英管中，以5-10℃/min的升温速率，升到950-1050℃，保温2-4h；然后在第一时间段内降温至700-900℃，接着在第二时间段内降温至400-500℃，之后炉冷，得到所述锰方硼石单晶热释电材料。本发明的熔体法生长锰方硼石单晶热释电材料的方法制备的锰方硼石单晶热释电材料，具有优异的热释电，且该方法制备成本低。