FLUORINE ION IMPLANTATION SYSTEM WITH NON-TUNGSTEN MATERIALS AND METHODS OF USING

• Main Authors: YEDAVE SHARAD N, TANG YING, DESPRES JOSEPH ROBERT, SWEENEY JOSEPH D
• Format: Patent
• Language: Chinese; English
• Published: 13.08.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

A system and method for fluorine ion implantation are described, which include a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current. 本发明描述用于氟离子植入的系统和方法，其包括用以产生供植入到个体中的氟离子物质的氟气体源和包括一或多种非钨材料(石墨、碳化物、氟化物、氮化物、氧化物、陶瓷)的电弧室。所述系统在系统操作期间最小化氟化钨的形成，由此延长源寿命且促进经改良的系统性能。此外，所述系统可包括氢和/或氢化物气体源，且这些气体可与氟气一起使用以改良源寿命和/或束电流。