SINGLE-PHOTON AVALANCHE DIODE AND METHOD OF PRODUCING SAME

The embodiment of the invention relates to a single-photon avalanche diode and a method of producing the same. The photon avalanche diode includes a semiconductor body having a first side and a second side opposite the first side, a primary doped region of a first conductivity type at the first side...

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Bibliographic Details
Main Author FEICK HENNING
Format Patent
LanguageChinese
English
Published 13.08.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The embodiment of the invention relates to a single-photon avalanche diode and a method of producing the same. The photon avalanche diode includes a semiconductor body having a first side and a second side opposite the first side, a primary doped region of a first conductivity type at the first side of the semiconductor body, a primary doped region of a second conductivity type opposite the first conductivity type at the second side of the semiconductor body, an enhancement region of the second conductivity type below and adjoining the primary doped region of the first conductivity type, the enhancement region forming an active pn-junction with the primary doped region of the first conductivity type, and a collection region of the first conductivity type interposed between the enhancement region and the primary doped region of the second conductivity type and configured to transport a photocarrier generated in the collection region or the primary doped region of the second conductivity type towards the enhanc
Bibliography:Application Number: CN202110184356