MULTI-JUNCTION DEVICE PRODUCTION PROCESS

• Main Authors: MCMEEKIN DAVID P, SNAITH HENRY JAMES
• Format: Patent
• Language: Chinese; English
• Published: 06.08.2021
• Subjects: ELECTRICITY

The invention relates to a process for producing a multi-junction device comprising a layer of a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A]a[M]b[X]c, wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18; and wherein the process comprises forming the layer of the crystalline A/M/X material by disposing a film-forming solution on a substrate, wherein the film-forming solution comprises: (a) one or more M cations; and (b) a solvent; wherein the solvent comprises (i) an aprotic solvent; and (ii) an organic amine, and wherein the substrate comprises: a photoactive region comprising a photoactive material, and a charge recombination layer which is disposed on the photoactive region by solution-deposition. Multi-junction devices are also the subject of the present invention. 本发明